A binding method for tubular target
Target (molybdenum target (Mo), niobium target (Nb), molybdenum niobium target (MoNb), silver target (Ag), monocrystalline silicon target (Si), polysilicon target, copper target (Cu) and aluminum target (Al) in sputtering use, First of all, the target (molybdenum target (Mo), niobium target (Nb), molybdenum niobium target (MoNb), silver target (Ag), monocrystalline silicon target (Si), polysilicon target, copper target (Cu) and aluminum target (Al) is bound to the metal back tube (or, the target is welded on the back tube) can be sputtered. The metal back tube is a whole, without jointing or welding joints, while the tubular target is a single length of 30mm ~ 600mm. Several or even a dozen single tubular targets are fixed on an integral back tube by combining with a transition layer. There are two binding modes for tubular targets (molybdenum target (Mo), niobium target (Nb), molybdenum niobium target (MoNb), silver target (Ag), monocrystalline silicon target (Si), polysilicon target, copper target (Cu) and aluminum target (Al)) according to their use environment. One is the high power use of tubular targets. Due to the high power of the tubular target, a large amount of heat will be generated, with the highest instantaneous thermal temperature exceeding 300℃. The heat generated will be transmitted to cooling water through the target, the combined transition layer and the back pipe. The bonding transition layer is required not to melt at such high temperatures. This high power sputtering using transition layer material is: binding special conductive adhesive + graphite (C)+ copper (Cu)/ aluminum (Al) net or wire /SUS304 stainless steel net or wire; The other is the low power use of tubular targets. The tubular target at low power generates less heat than high power, and the highest instantaneous thermal temperature is much smaller than high power sputtering. This kind of low power sputtering uses transition layer materials: low melting point soft metal indium or indium tin alloy.
At present, when tubular target manufacturing enterprises or tubular target binding enterprises use the binding layer, they either use binding adhesive, copper (Cu)/SUS04/ aluminum, or use the soft metal indium with low melting point. Can not adapt to the needs of low power and high power sputtering processes, and in high power sputtering binding with the use of transition layer material thermal conductivity is not good, in high power sputtering due to the instantaneous thermal temperature caused by cracking target.
The tubular target is tightly fixed with the back tube through the bonding layer material, and the thermal and electrical properties of the bonding layer material and the back tube are equal.
