Molybdenum target welding method
With the development of semiconductor IC chip preparation towards large size, the size of sputtering target and sputtering power also increase. The requirements for the microstructure of sputtering target and the connection between target and backplane are getting higher and higher, and the connection technology of large-area target (diameter ≥400mm) and backplane has become a key technology for the preparation of target components.
The backplane can support the sputtering platform in the target assembly and has the effect of conducting heat. The material used as a backplane needs to have sufficient strength and needs to have good thermal and electrical conductivity.
Brazing is a conventional welding method, the principle of which is to combine the metal or alloy billet with the backplane through the filler metal. Specifically, in practical application, the filler metal is first added to the welding surface of the billet to be welded and the backplane, and then ultrasonic welding equipment is used on the welding platform for ultrasonic treatment, so that the filler metal is fully saturated, and the billet and the backplane are combined together.
Sputtering molybdenum target includes a target base having a flat top surface and a cylindrical concave part therein. The target insert has a truncated taper back surface and a front surface corresponding to a cylindrical concave part of a molybdenum target base. The molybdenum target insert is hot-pressed into a cylindrical concave part of the target base, thereby achieving a state of plastic deformation in order to diffuse the target insert into the target base and form the target assembly.
