Molybdenum alloy film and indium oxide film etching fluid composition
Molybdenum alloy film, indium oxide film and other single film or multiple film of molybdenum alloy film and indium oxide film are used on the pixel electrode of semiconductor device and TFT-LCD. The pixel electrode is generally deposited on the substrate by sputtering and other methods, and the photoresist is evenly smeared on it, and then through the patterned film, the image is imprinted after light irradiation, so that the required pattern photoresist is imprinted, and dry etching or wet etching is used to display the pattern on the metal film at the bottom of the photoresist. Stripping is done by removing unwanted photoresist and a series of other lithographic projects.
When the same etching liquid is used to etch molybdenum alloy film and indium oxide film, although the manufacturing engineering can be simplified, the chemical resistance of molybdenum alloy film is generally good, and there are problems that it is not easy to wet etching; In addition, in order to etch indium oxide film used by the oxalic acid series of etching fluid, molybdenum alloy film can not be etched.
When molybdenum alloy film and indium oxide film are etched with the etching solution of the previous technology, the chemical reaction between the etching solution and the metal film will generate precipitates, resulting in poor pixels and other problems. In addition, in continuous use, there are also problems such as low engineering time and durability of etching equipment. In addition, the corrosion inhibition performance of the copper film used for the lower TFT source and drain is not complete, so that part of the copper die is corroded, and the overall component yield is low.
In order to minimize, or even eliminate, the chemical reaction that can produce precipitates between the etching solution and molybdenum alloy film and indium oxide film, it is necessary to develop an etching solution that can improve the corrosion inhibition performance of the lower copper film and be used for molybdenum alloy film, indium oxide film and molybdenum alloy film and indium oxide film.
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