Preparation method of high density molybdenum crucible
Sapphire is a single crystal of alumina (α-Al2O3). Sapphire crystal has excellent optical properties, mechanical properties and chemical stability, high strength, high hardness, erosion resistance, can work under the harsh conditions of close to 2000℃ high temperature, so it is widely used in infrared military devices, satellite space technology, high intensity laser window materials. Its unique lattice structure, excellent mechanical properties, good thermal properties make sapphire crystal become the most ideal substrate materials for practical applications of semiconductor GaN/Al2O3 light emitting diodes (LED), large-scale integrated circuits SOI and SOS and superconducting nanostructured films.
At present, there are many methods to make sapphire single crystal, such as bubble growth method, Chai's crystal pulling method, guided mode method, heat exchange method, temperature gradient method, crucible lowering method, cold core shoulder microlifting method and so on. Among these methods, high quality molybdenum crucible is needed to grow sapphire single crystal by heat exchange method.
Molybdenum is a refractory metal, because of its high melting point (melting point reached 2620℃), high temperature strength characteristics, often used in high-temperature components. At present, there are two main manufacturing methods for molybdenum crucible used in high temperature melting: powder metallurgy method and molybdenum plate welding method.
Our company can produce molybdenum crucible and molybdenum processing workpiece according to customer's requirements.
